update examples/semiconductor

.gitignore

@@ -39,6 +39,13 @@ docs/_build/
 # DATA & EXAMPLE FILES
 # ====================
 examples/**/*.json
+!examples/**/package.json
+!examples/**/package-lock.json
+
+
+# Exception
+!examples/semiconductor/semiconductor-ui/api/poetry.lock
+
 .openssa/
 test*.ipynb
 tmp/

examples/semiconductor/expert-knowledge.txt

@@ -0,0 +1,62 @@
+Etching Silicon Dioxide (SiO2): typical recipe(s)
+=================================================
+
+If using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE)
+--------------------------------------------------------------------
+
+
+GASES & FLOW RATES:
+
+Common gas is CHF3, often mixed with small amount of Ar and/or O2:
+- CHF3 provides fluorine for etching while also polymerising to provide sidewall protection, improving anisotropy
+- Ar helps maintain stable plasma
+- O2 enhances volatility of etch products
+
+Typical starting point:
+- 20-50 sccm of CHF3
+- 5-10 sccm of Ar
+- 2-5 sccm of O2
+
+
+ICP POWER:
+
+Higher ICP power (e.g., 500-1000W) increases plasma density and etch rate
+BUT may also lead to more physical damage and less anisotropic profiles
+
+
+RF POWER:
+
+Lower RF power (e.g., 10-50W) provides more anisotropic profiles
+
+
+PRESSURE:
+
+Lower pressure (e.g., 5-20 mTorr) helps improve anisotropy
+
+
+ETCH TIME:
+
+You need to adjust etch time depending on desired depth and etch rate.
+
+Remember that etch rate can vary across wafer and over time, so it's best to overestimate time and measure depth periodically.
+
+
+END-POINT DETECTION:
+
+Many RIE systems have optical emission spectroscopy (OES) or interferometry for end-point detection.
+These can stop etching process when desired depth is reached.
+
+
+OPTIMIZATION CONSIDERATIONS:
+
+- Etch rate
+- Selectivity to mask and underlying layers
+- Etch profile (anisotropy)
+- Uniformity
+- Physical or chemical damage
+
+
+SAFETY PROCEDURES:
+
+- Always follow safety procedures when working with plasma etching systems and handling gases
+- Confirm with facility and equipment manager that your planned recipe is compatible and won't cause any damage or contamination

examples/semiconductor/expert-programs.yml

@@ -0,0 +1,17 @@
+plan:
+  task: |-
+    For etching PECVD SiO2 using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE),
+    recommend 2 good parameter sets and their relative advantages/disadvantages
+
+  sub-htps:
+    - task: |-
+        Get typical gases used for such process and their flow rate ranges
+        in SiO2 etching using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE)
+
+    - task: |-
+        Get typical ICP Power, RF Power and Pressure value ranges and associated trade-offs
+        in SiO2 etching using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE)
+
+    - task: |-
+        Recommend 2 parameter sets (each including Flow Rate for each Gas, plus ICP Power, RF Power and Pressure)
+        with analysis of their relative pros and cons.

examples/semiconductor/semiconductor-ui/api/Dockerfile

@@ -0,0 +1,40 @@
+FROM --platform=linux/amd64 python:3.12-slim AS base
+
+# Install Poetry
+RUN apt update -y && apt upgrade -y && apt install git -y
+RUN apt update -y && apt install poppler-utils -y
+RUN python -m pip install --upgrade pip && \
+    pip install --no-cache-dir poetry==1.3.2
+
+
+RUN poetry config virtualenvs.in-project true && \
+    poetry config installer.max-workers 10
+
+WORKDIR /api
+
+COPY pyproject.toml poetry.lock /api/
+
+# =======================================
+# Build image
+FROM base AS build
+ENV POETRY_REQUESTS_TIMEOUT=300
+ENV PIP_DEFAULT_TIMEOUT=300
+RUN poetry install
+
+# =======================================
+# App image
+FROM base AS app
+
+COPY --from=build /api/.venv /api/.venv
+
+ENV PATH="/api/.venv/bin:$PATH"
+ENV PATH="/api:$PATH"
+# ENV PATH="/api/openssa:$PATH"
+ENV PYTHONUNBUFFERED=1
+ENV PYTHONPATH="/"
+
+COPY . /api/
+
+EXPOSE 8080
+
+CMD ["sh", "start.sh"]

examples/semiconductor/semiconductor-ui/api/data_and_knowledge.py

@@ -0,0 +1,35 @@
+from __future__ import annotations
+
+from pathlib import Path
+from typing import TYPE_CHECKING
+
+from dotenv import load_dotenv
+import yaml
+
+if TYPE_CHECKING:
+    from openssa.core.programming.hierarchical.plan import HTPDict
+
+
+load_dotenv()
+
+
+EXPERT_KNOWLEDGE_FILE_PATH: Path = Path(__file__).parent / 'expert-knowledge.txt'
+with open(file=EXPERT_KNOWLEDGE_FILE_PATH,
+          buffering=-1,
+          encoding='utf-8',
+          errors='strict',
+          newline=None,
+          closefd=True,
+          opener=None) as f:
+    EXPERT_KNOWLEDGE: str = f.read()
+
+
+EXPERT_PROGRAM_SPACE_FILE_PATH: Path = Path(__file__).parent / 'expert-program-space.yml'
+with open(file=EXPERT_PROGRAM_SPACE_FILE_PATH,
+          buffering=-1,
+          encoding='utf-8',
+          errors='strict',
+          newline=None,
+          closefd=True,
+          opener=None) as f:
+    EXPERT_PROGRAM_SPACE: dict[str, HTPDict] = yaml.safe_load(stream=f)

examples/semiconductor/semiconductor-ui/api/expert-knowledge.txt

@@ -0,0 +1,62 @@
+Etching Silicon Dioxide (SiO2): typical recipe(s)
+=================================================
+
+If using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE)
+--------------------------------------------------------------------
+
+
+GASES & FLOW RATES:
+
+Common gas is CHF3, often mixed with small amount of Ar and/or O2:
+- CHF3 provides fluorine for etching while also polymerising to provide sidewall protection, improving anisotropy
+- Ar helps maintain stable plasma
+- O2 enhances volatility of etch products
+
+Typical starting point:
+- 20-50 sccm of CHF3
+- 5-10 sccm of Ar
+- 2-5 sccm of O2
+
+
+ICP POWER:
+
+Higher ICP power (e.g., 500-1000W) increases plasma density and etch rate
+BUT may also lead to more physical damage and less anisotropic profiles
+
+
+RF POWER:
+
+Lower RF power (e.g., 10-50W) provides more anisotropic profiles
+
+
+PRESSURE:
+
+Lower pressure (e.g., 5-20 mTorr) helps improve anisotropy
+
+
+ETCH TIME:
+
+You need to adjust etch time depending on desired depth and etch rate.
+
+Remember that etch rate can vary across wafer and over time, so it's best to overestimate time and measure depth periodically.
+
+
+END-POINT DETECTION:
+
+Many RIE systems have optical emission spectroscopy (OES) or interferometry for end-point detection.
+These can stop etching process when desired depth is reached.
+
+
+OPTIMIZATION CONSIDERATIONS:
+
+- Etch rate
+- Selectivity to mask and underlying layers
+- Etch profile (anisotropy)
+- Uniformity
+- Physical or chemical damage
+
+
+SAFETY PROCEDURES:
+
+- Always follow safety procedures when working with plasma etching systems and handling gases
+- Confirm with facility and equipment manager that your planned recipe is compatible and won't cause any damage or contamination

examples/semiconductor/semiconductor-ui/api/expert-program-space.yml

@@ -0,0 +1,17 @@
+plan:
+  task: |-
+    For etching PECVD SiO2 using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE),
+    recommend 2 good parameter sets and their relative advantages/disadvantages
+
+  sub-htps:
+    - task: |-
+        Get typical gases used for such process and their flow rate ranges
+        in SiO2 etching using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE)
+
+    - task: |-    
+        Get typical ICP Power, RF Power and Pressure value ranges and associated trade-offs
+        in SiO2 etching using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE)
+
+    - task: |-
+        Recommend 2 parameter sets (each including Flow Rate for each Gas, plus ICP Power, RF Power and Pressure)
+        with analysis of their relative pros and cons.

examples/semiconductor/semiconductor-ui/api/main.py

@@ -0,0 +1,136 @@
+import os
+from fastapi import FastAPI
+from fastapi.middleware.cors import CORSMiddleware
+from collections import defaultdict
+import openai
+from openssa import Agent, ProgramSpace, HTP, HTPlanner, OpenAILM
+
+
+# pylint: disable=wrong-import-order
+from data_and_knowledge import EXPERT_PROGRAM_SPACE, EXPERT_KNOWLEDGE
+from semikong_lm import SemiKongLM
+
+
+def get_or_create_agent(
+    use_semikong_lm: bool = True, max_depth=2, max_subtasks_per_decomp=4
+) -> Agent:
+    lm = (SemiKongLM if use_semikong_lm else OpenAILM).from_defaults()
+
+    program_space = ProgramSpace(lm=lm)
+    if EXPERT_PROGRAM_SPACE:
+        for program_name, htp_dict in EXPERT_PROGRAM_SPACE.items():
+            htp = HTP.from_dict(htp_dict)
+            program_space.add_or_update_program(
+                name=program_name, description=htp.task.ask, program=htp
+            )
+
+    return Agent(
+        program_space=program_space,
+        programmer=HTPlanner(
+            lm=lm, max_depth=max_depth, max_subtasks_per_decomp=max_subtasks_per_decomp
+        ),
+        knowledge={EXPERT_KNOWLEDGE} if EXPERT_KNOWLEDGE else None,
+        resources={},
+    )
+
+
+import time
+
+app = FastAPI()
+
+app.add_middleware(
+    CORSMiddleware,
+    allow_origins=[os.environ.get("FRONTEND_URL", "http://localhost:4000")],
+    allow_credentials=True,
+    allow_methods=["*"],
+    allow_headers=["*"],
+)
+
+client = openai.OpenAI(api_key=os.environ["OPENAI_API_KEY"])
+
+def call_gpt(prompt):
+    response = client.chat.completions.create(
+        model="gpt-4o",
+        messages=[
+            {
+                "role": "system",
+                "content": "You are an expert in parsing text into a specific format. Please help me with this task.",
+            },
+            {"role": "user", "content": prompt},
+        ],
+    )
+    return response.choices[0].message.content
+
+def parse_recipe_text(text):
+    parsed_data = {"recipe_1": "", "recipe_2": "", "agent_advice": ""}
+    lines = text.split("\n")
+    current_section = None
+
+    for line in lines:
+        if "recipe_1:" in line:
+            current_section = "recipe_1"
+        elif "recipe_2:" in line:
+            current_section = "recipe_2"
+        elif "agent_advice:" in line:
+            current_section = "agent_advice"
+        elif current_section:
+            parsed_data[current_section] += line + "\n"
+
+    parsed_data = {key: value.strip() for key, value in parsed_data.items()}
+    return parsed_data
+
+def solve_semiconductor_question(question):
+    start = time.time()
+    solutions = defaultdict(str)
+
+    solutions[question] = get_or_create_agent(use_semikong_lm=True).solve(
+        problem=question
+    )
+
+    print(f"get_or_create_agent taken: {time.time() - start}")
+    start = time.time()
+
+    solution = solutions[question]
+    solution = solution.replace("$", r"\$")
+
+    prompt = f"""{solution} \n\n Please help me parse the above text into this format:\n
+         recipe_1: Show the recipe 1 here\n 
+         recipe_2: Show the recipe 2 here\n
+         agent_advice: Show the agent's general considerations here\n
+         DO NOT forget the key and DO NOT change the key format.
+    """
+
+    solution = call_gpt(prompt)
+    print(f"call_gpt taken: {time.time() - start}")
+    start = time.time()
+    parsed_solution = parse_recipe_text(solution)
+    print(f"parse_recipe_text taken: {time.time() - start}")
+    return parsed_solution
+
+
+@app.get("/")
+async def root():
+    return {"message": "Hello World"}
+
+
+@app.get("/data")
+async def get_data():
+    return {"data": "data"}
+
+
+@app.post("/data")
+async def post_data(data: dict):
+    question = data.get("question")
+    if not question:
+        return {"error": "No question provided"}, 400
+
+    try:
+        parsed_answer = solve_semiconductor_question(question)
+        return parsed_answer
+    except Exception as e:
+        # logger.error(f"Error solving the question: {e}")
+        # return {"error": str(e)}, 500
+        time.sleep(10)
+        return """
+{'recipe_1': 'Parameters:\n- Gases and Flow Rates:\n - CHF3: 50 sccm\n - Ar: 10 sccm\n - O2: 5 sccm\n- ICP Power: 1000 W\n- RF Power: 50 W\n- Pressure: 20 mTorr\n- Etch Time: Start with 8 minutes and measure periodically\n\nPros:\n1. High Etch Rate: The high ICP power and higher flow rates of CHF3 and O2 increase the density of reactive species, leading to a faster etch rate.\n2. Stable Plasma: The addition of Ar at 10 sccm helps maintain a stable plasma, which is crucial for consistent etching.\n3. Improved Volatility: The higher O2 flow rate enhances the volatility of etch products, improving overall etch efficiency.\n\nCons:\n1. Physical Damage: The high ICP power and RF power can lead to more physical damage to the PR mask and underlying layers due to increased ion bombardment.\n2. Less Anisotropic Profiles: Higher RF power may result in less anisotropic etch profiles, which could be problematic for applications requiring precise vertical etching.\n3. Higher Pressure: The higher pressure may reduce the mean free path of ions, potentially affecting the directionality of the etch.', 'recipe_2': 'Parameters:\n- Gases and Flow Rates:\n - CHF3: 20 sccm\n - Ar: 5 sccm\n - O2: 2 sccm\n- ICP Power: 500 W\n- RF Power: 10 W\n- Pressure: 5 mTorr\n- Etch Time: Start with 15 minutes and measure periodically\n\nPros:\n1. High Anisotropy: The lower RF power and lower pressure will help achieve more anisotropic etch profiles, which is essential for applications requiring precise vertical etching.\n2. Reduced Physical Damage: Lower ICP and RF power reduce the risk of physical damage to the PR mask and underlying layers, making this set suitable for delicate structures.\n3. Directional Etching: The lower pressure improves the directionality of the etch by reducing the number of collisions between ions and neutral species.\n\nCons:\n1. Lower Etch Rate: The lower ICP power and reduced flow rates of CHF3 and O2 will result in a slower etch rate, requiring longer etch times to achieve the desired depth.\n2. Plasma Stability: The lower flow rate of Ar may make it more challenging to maintain a stable plasma, which could affect the consistency of the etch process.\n3. Process Control: The lower pressure and power settings require more precise control of the process parameters to maintain stability and achieve the desired etch profile.', 'agent_advice': '- Etch Rate and Uniformity: Regularly measure the etch depth to ensure uniformity across the wafer. Adjust the etch time accordingly.\n- End-Point Detection: Utilize optical emission spectroscopy (OES) or interferometry if available on the Plasmalab System 100 to accurately determine the end-point of the etch process.\n- Safety Procedures: Always follow safety protocols when handling gases and operating the ICP RIE system. Confirm with the facility manager that the chosen recipe is compatible with the equipment.\n\nBy starting with these recipes and making necessary adjustments based on periodic measurements and observations, you should be able to achieve the desired etch depth and profile for your SiO2 pattern.\n```'}
+    """